| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab initio investigation of potential indium and gallium free chalcopyrite compounds for photovoltaic application
|
Raulot, J.M.
|
|
2005
|
66 |
11 |
p. 2019-2023
5 p.
|
artikel
|
| 2 |
Admittance spectroscopy of polycrystalline and epitaxially grown CuGaSe2
|
Metzner, Heinrich
|
|
2005
|
66 |
11 |
p. 1940-1943
4 p.
|
artikel
|
| 3 |
Band-gap grading in Cu(In,Ga)Se2 solar cells
|
Gloeckler, M.
|
|
2005
|
66 |
11 |
p. 1891-1894
4 p.
|
artikel
|
| 4 |
Bandlike and localized defect states in CuInSe2 solar cells
|
AbuShama, Jehad A.M.
|
|
2005
|
66 |
11 |
p. 1855-1857
3 p.
|
artikel
|
| 5 |
Characterization of CuAlO2 thin film prepared by rapid thermal annealing of an Al2O3/Cu2O/sapphire structure
|
Shy, J.H.
|
|
2005
|
66 |
11 |
p. 2123-2126
4 p.
|
artikel
|
| 6 |
Characterization of Cu(In,Ga)Se2 thin films prepared by evaporationfrom ternary compounds
|
Yamaguchi, T.
|
|
2005
|
66 |
11 |
p. 2000-2003
4 p.
|
artikel
|
| 7 |
Characterization of interface between CuInSe2 and In2O3
|
Malar, P.
|
|
2005
|
66 |
11 |
p. 1928-1932
5 p.
|
artikel
|
| 8 |
Chiral optical absorption bands in []Cd1−x Mn x Ga2S4 semiconducting compound
|
Joshi, N.V.
|
|
2005
|
66 |
11 |
p. 2011-2014
4 p.
|
artikel
|
| 9 |
Composition and morphology of partially selenized CuIn1−X Ga X Se2 thin films prepared using diethylselenide (DESe) as selenium source
|
Dhere, Neelkanth G.
|
|
2005
|
66 |
11 |
p. 1876-1879
4 p.
|
artikel
|
| 10 |
Control of luminescence and conductivity of delafossite-type CuYO2 by substitution of rare earth cation (Eu, Tb) and/or Ca cation for Y cation
|
Tsuboi, Nozomu
|
|
2005
|
66 |
11 |
p. 2134-2138
5 p.
|
artikel
|
| 11 |
Correlation of stability to varied CdCl2 treatment and related defects in CdS/CdTe PV devices as measured by thermal admittance spectroscopy
|
Enzenroth, R. Albert
|
|
2005
|
66 |
11 |
p. 1883-1886
4 p.
|
artikel
|
| 12 |
Crystal structure and cation distribution in the solid solution series 2(ZnX)–CuInX2 (X=S, Se, Te)
|
Schorr, S.
|
|
2005
|
66 |
11 |
p. 1961-1965
5 p.
|
artikel
|
| 13 |
Cu(In,Ga)Se2 thin-film solar cells with ZnS(O,OH), Zn–Cd–S(O,OH), and CdS buffer layers
|
Bhattacharya, R.N.
|
|
2005
|
66 |
11 |
p. 1862-1864
3 p.
|
artikel
|
| 14 |
Defect properties of CuInSe2 and CuGaSe2
|
Wei, Su-Huai
|
|
2005
|
66 |
11 |
p. 1994-1999
6 p.
|
artikel
|
| 15 |
Density of states effective mass of n-type CuInSe2 from the temperature dependence of Hall coefficient in the activation regime
|
Wasim, S.M.
|
|
2005
|
66 |
11 |
p. 1887-1890
4 p.
|
artikel
|
| 16 |
Development of a comprehensive design tool for non-stoichiometric compound thin film solar cells: Calculations of the opto-electrical properties of multinary alloy and optimization of the cell performance
|
Hwang, H.L.
|
|
2005
|
66 |
11 |
p. 1908-1914
7 p.
|
artikel
|
| 17 |
Editorial Board / Publication Information
|
|
|
2005
|
66 |
11 |
p. CO2-
1 p.
|
artikel
|
| 18 |
Effect of Cu deficiency on the optical properties and electronic structure of CuIn1−x Ga x Se2
|
Han, Sung-Ho
|
|
2005
|
66 |
11 |
p. 1895-1898
4 p.
|
artikel
|
| 19 |
Effect of donor–acceptor defect pairs on the crystal structure of In and Ga rich ternary compounds of Cu–In(Ga)–Se(Te) systems
|
Wasim, S.M.
|
|
2005
|
66 |
11 |
p. 1990-1993
4 p.
|
artikel
|
| 20 |
Effect of Mn-doping on the electrical properties of Cu2GeSe3
|
Marcano, G.
|
|
2005
|
66 |
11 |
p. 2086-2089
4 p.
|
artikel
|
| 21 |
Electronic states of lanthanide in the ternary thiogallate CaGa2S4
|
Nomura, Shigetaka
|
|
2005
|
66 |
11 |
p. 2090-2093
4 p.
|
artikel
|
| 22 |
Epitaxial Cu(In,Ga)S2 thin film solar cells
|
Hahn, Th.
|
|
2005
|
66 |
11 |
p. 1899-1902
4 p.
|
artikel
|
| 23 |
Evaluation of stoichiometric rare-earth molybdate and tungstate compounds as laser materials
|
Kato, A.
|
|
2005
|
66 |
11 |
p. 2079-2081
3 p.
|
artikel
|
| 24 |
Exciton spectra, valence band splitting, and energy band structure of CuGaXIn1−XS2 and CuGaXIn1−XSe2 crystals
|
Syrbu, N.N.
|
|
2005
|
66 |
11 |
p. 1974-1977
4 p.
|
artikel
|
| 25 |
Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods
|
Chichibu, Shigefusa F.
|
|
2005
|
66 |
11 |
p. 1868-1871
4 p.
|
artikel
|
| 26 |
First-principles calculation of defect formation energy in chalcopyrite-type CuInSe2, CuGaSe2 and CuAlSe2
|
Maeda, Tsuyoshi
|
|
2005
|
66 |
11 |
p. 1924-1927
4 p.
|
artikel
|
| 27 |
Growth of ZnInGaS4 by normal freezing method
|
Sugiyama, Mutsumi
|
|
2005
|
66 |
11 |
p. 2127-2129
3 p.
|
artikel
|
| 28 |
High field ESR measurements of spin gap system MCu2(PO4)2
|
Kaji, T.
|
|
2005
|
66 |
11 |
p. 2068-2071
4 p.
|
artikel
|
| 29 |
Impurity-stabilized zinc-blende phase of wurtzite compounds
|
Dalpian, Gustavo M.
|
|
2005
|
66 |
11 |
p. 2008-2010
3 p.
|
artikel
|
| 30 |
Influence of cation substitution on the magnetic properties of the FeCr2S4 ferrimagnet
|
Tsurkan, V.
|
|
2005
|
66 |
11 |
p. 2040-2043
4 p.
|
artikel
|
| 31 |
In situ investigation of the formation of Cu(In,Ga)Se2 from selenised metallic precursors by X-ray diffraction—The impact of Gallium, Sodium and Selenium excess
|
Hergert, F.
|
|
2005
|
66 |
11 |
p. 1903-1907
5 p.
|
artikel
|
| 32 |
Investigation of the solid solution series 2(MnX)–CuInX2 (X=S, Se)
|
Schorr, S.
|
|
2005
|
66 |
11 |
p. 1966-1969
4 p.
|
artikel
|
| 33 |
Light figure studies of optical anisotropy induced by nanoscale spatial modulation in TlInS2
|
Shim, Yonggu
|
|
2005
|
66 |
11 |
p. 2116-2118
3 p.
|
artikel
|
| 34 |
Local structure of Mn in (Ga,Mn)As probed by X-ray absorption spectroscopy
|
Bacewicz, R.
|
|
2005
|
66 |
11 |
p. 2004-2007
4 p.
|
artikel
|
| 35 |
LO multi-phonons cooperative phenomenon in ZnSe–BeSemixed crystals
|
Tite, T.
|
|
2005
|
66 |
11 |
p. 2099-2103
5 p.
|
artikel
|
| 36 |
Materials design for Cu-based quaternary compounds derived from chalcopyrite-rule
|
Matsushita, Hiroaki
|
|
2005
|
66 |
11 |
p. 1933-1936
4 p.
|
artikel
|
| 37 |
MBE growth of a novel chalcopyrite-type ternary compound MnGeP2
|
Sato, K.
|
|
2005
|
66 |
11 |
p. 2030-2035
6 p.
|
artikel
|
| 38 |
Mn1−x Fe x In2Se4: a new layered semiconductor system
|
Sagredo, V.
|
|
2005
|
66 |
11 |
p. 2027-2029
3 p.
|
artikel
|
| 39 |
Non-stoichiometry and properties of ternary semiconductor phases of variable composition based on IV–VI compounds
|
Rogacheva, E.I.
|
|
2005
|
66 |
11 |
p. 2104-2111
8 p.
|
artikel
|
| 40 |
Non-stoichiometry effects on electrical and luminescence properties of the layered oxysulfide (LaO)CuS
|
Takase, K.
|
|
2005
|
66 |
11 |
p. 2130-2133
4 p.
|
artikel
|
| 41 |
On the statistical background of the correlation of the magnetic and electrical properties as well as of the creation of a spin-glass state in spinels with chromium
|
Warczewski, J.
|
|
2005
|
66 |
11 |
p. 2044-2048
5 p.
|
artikel
|
| 42 |
Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers
|
Lu, C.R.
|
|
2005
|
66 |
11 |
p. 2082-2085
4 p.
|
artikel
|
| 43 |
Optical gain due to the Eu transition in the alloy of Ca1-xEuxGa2S4
|
Kato, A.
|
|
2005
|
66 |
11 |
p. 2076-2078
3 p.
|
artikel
|
| 44 |
Optical phonon modes and structure of ZnGa2Se4 and ZnGa2S4
|
Eifler, A.
|
|
2005
|
66 |
11 |
p. 2052-2057
6 p.
|
artikel
|
| 45 |
Orbital fluctuations and orbital order in FeCr2S4
|
Tsurkan, V.
|
|
2005
|
66 |
11 |
p. 2036-2039
4 p.
|
artikel
|
| 46 |
Percolation picture for long wavelength phonons in zinc blende alloys: application to GaInAs
|
Pagès, O.
|
|
2005
|
66 |
11 |
p. 2094-2098
5 p.
|
artikel
|
| 47 |
Phonon spectra of stoichiometric rare-earth compound of EuGa2S4
|
Kato, A.
|
|
2005
|
66 |
11 |
p. 2072-2075
4 p.
|
artikel
|
| 48 |
Photoluminescence of CdGeP2 and (Cd,Mn)GeP2
|
Medvedkin, G.A.
|
|
2005
|
66 |
11 |
p. 2015-2018
4 p.
|
artikel
|
| 49 |
Photoluminescence spectra of rare earth doped CaGa2S4 single crystals
|
Hidaka, C.
|
|
2005
|
66 |
11 |
p. 2061-2064
4 p.
|
artikel
|
| 50 |
Photoluminescence study of ZnCdSe/ZnSe quantum dot systems
|
Lee, J.R.
|
|
2005
|
66 |
11 |
p. 1920-1923
4 p.
|
artikel
|
| 51 |
Preparation of Ca(1−x)EuxGa2S4 crystals and their photoluminescence, absorption and excitation spectra
|
Hidaka, Chiharu
|
|
2005
|
66 |
11 |
p. 2058-2060
3 p.
|
artikel
|
| 52 |
Preparation of CuInGeSe4 thin films by selenization method using the Cu–In–Ge evaporated layer precursors
|
Matsushita, Hiroaki
|
|
2005
|
66 |
11 |
p. 1937-1939
3 p.
|
artikel
|
| 53 |
Preparation of CuInS2 thin films by metal–organic decomposition
|
Nakamura, Shigeyuki
|
|
2005
|
66 |
11 |
p. 1944-1946
3 p.
|
artikel
|
| 54 |
Preparation of Cu2ZnSnS4 thin films by hybrid sputtering
|
Tanaka, Tooru
|
|
2005
|
66 |
11 |
p. 1978-1981
4 p.
|
artikel
|
| 55 |
Properties of CuIn(S x Se1−x )2 polycrystalline thin films prepared by chemical spray pyrolysis
|
Shirakata, Sho
|
|
2005
|
66 |
11 |
p. 1970-1973
4 p.
|
artikel
|
| 56 |
Raman scattering of Zn doped CuGaS2 layers grown by vapor phase epitaxy
|
Terasako, T.
|
|
2005
|
66 |
11 |
p. 1982-1986
5 p.
|
artikel
|
| 57 |
Raman studies of lattice and local vibrational modes of GaInNAs prepared by molecular beam epitaxy
|
Shirakata, Sho
|
|
2005
|
66 |
11 |
p. 2119-2122
4 p.
|
artikel
|
| 58 |
Rapid exothermic synthesis of chalcopyrite-type CuInSe2
|
Wada, Takahiro
|
|
2005
|
66 |
11 |
p. 1987-1989
3 p.
|
artikel
|
| 59 |
Reaction kinetics of α-CuInSe2 formation from an In2Se3/CuSe bilayer precursor film
|
Kim, W.K.
|
|
2005
|
66 |
11 |
p. 1915-1919
5 p.
|
artikel
|
| 60 |
Real-time study of phase transformations in Cu–In chalcogenide thin films using in situ Raman spectroscopy and XRD
|
Rudigier, E.
|
|
2005
|
66 |
11 |
p. 1954-1960
7 p.
|
artikel
|
| 61 |
RECa4O(BO3)3 thin films as new Luminescent materials screened by the combinatorial method
|
Sano, Hiroyuki
|
|
2005
|
66 |
11 |
p. 2112-2115
4 p.
|
artikel
|
| 62 |
Reflectivity measurements of superionic conductors for Li ion secondary battery materials
|
Ishikawa, Hirofumi
|
|
2005
|
66 |
11 |
p. 2065-2067
3 p.
|
artikel
|
| 63 |
Spectroscopic analysis of CIGS2/CdS thin film solar cell heterojunctions on stainless steel foil
|
Dhere, N.G.
|
|
2005
|
66 |
11 |
p. 1872-1875
4 p.
|
artikel
|
| 64 |
Spin glass like behavior in Cd0.42Mn0.58In2S4
|
Sagredo, V.
|
|
2005
|
66 |
11 |
p. 2024-2026
3 p.
|
artikel
|
| 65 |
Structural, electrical and optical properties of AgInS2 thin films grown by thermal evaporation method
|
Akaki, Y.
|
|
2005
|
66 |
11 |
p. 1858-1861
4 p.
|
artikel
|
| 66 |
Study of deep photoluminescence levels in CuInS2 crystals
|
Onishi, T.
|
|
2005
|
66 |
11 |
p. 1947-1949
3 p.
|
artikel
|
| 67 |
Synthesis of homogeneous pentenary chalcopyrite alloys with a classical two-step growth process
|
Dhlamini, F.D
|
|
2005
|
66 |
11 |
p. 1880-1882
3 p.
|
artikel
|
| 68 |
Temperature dependence of the photoluminescence spectra in AgGaS2
|
Ricci, P.C.
|
|
2005
|
66 |
11 |
p. 1950-1953
4 p.
|
artikel
|
| 69 |
Temperature dependence of the Urbach energy in ordered defect compounds Cu-III3-VI5 and Cu-III5-VI8
|
Bonalde, Ismardo
|
|
2005
|
66 |
11 |
p. 1865-1867
3 p.
|
artikel
|
| 70 |
The crystal structure of Fe2In2Se5, a FeIn2Se4-related polytype
|
Cedeño, C.
|
|
2005
|
66 |
11 |
p. 2049-2051
3 p.
|
artikel
|
| 71 |
The 14th International Conference on Ternary and Multinary Compounds
|
Kazmerski, Larry
|
|
2005
|
66 |
11 |
p. 1853-
1 p.
|
artikel
|
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