| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Absorption and photoluminescence under pressure in InGaAs/GaAs strained quantum wells
|
Sosin, T.P.
|
|
1995
|
56 |
3-4 |
p. 419-422
4 p.
|
artikel
|
| 2 |
A comparative study of ordered alloy and random alloy quantum wells of Zn1 − xCdxSe ZnSe under pressure
|
Baugher, E.M.
|
|
1995
|
56 |
3-4 |
p. 323-327
5 p.
|
artikel
|
| 3 |
Amorphization from the quenched high-pressure phase in tetrahedrally-bonded materials
|
Tsuji, K.
|
|
1995
|
56 |
3-4 |
p. 559-562
4 p.
|
artikel
|
| 4 |
A resonant Raman study on phonons in GaInAs/AlInAs multiple quantum wells
|
Jiang, De-Sheng
|
|
1995
|
56 |
3-4 |
p. 397-401
5 p.
|
artikel
|
| 5 |
A theoretical study of pressure effects on selenium-I
|
Clark, S.J.
|
|
1995
|
56 |
3-4 |
p. 329-334
6 p.
|
artikel
|
| 6 |
A variable coordination structure in II–VI semiconductors: The cinnabar phase
|
San Miguel, A.
|
|
1995
|
56 |
3-4 |
p. 555-558
4 p.
|
artikel
|
| 7 |
Band structure and structural stability of the high-pressure phases of the group VIb elements
|
Nishikawa, Atsushi
|
|
1995
|
56 |
3-4 |
p. 551-554
4 p.
|
artikel
|
| 8 |
Comparative study of photoluminescence in ordered and disordered GaInP alloys under high pressure
|
Kojima, Hideki
|
|
1995
|
56 |
3-4 |
p. 345-348
4 p.
|
artikel
|
| 9 |
CuGa(S x Se 1 − x )2 alloys at high pressure: Optical absorption and X-ray diffraction studies
|
González, J.
|
|
1995
|
56 |
3-4 |
p. 507-516
10 p.
|
artikel
|
| 10 |
Deep levels in AgGaSe2
|
Choi, I.-H.
|
|
1995
|
56 |
3-4 |
p. 595-598
4 p.
|
artikel
|
| 11 |
Dense tetrahedral structures of compound semiconductors
|
Crain, J.
|
|
1995
|
56 |
3-4 |
p. 495-500
6 p.
|
artikel
|
| 12 |
Determination of the energetical separation of DX states in GaAs and in AlAs by using planar-doped superlattices
|
Robert, J.L.
|
|
1995
|
56 |
3-4 |
p. 615-618
4 p.
|
artikel
|
| 13 |
Determination of the transport properties of composite fermions under high hydrostatic pressure
|
Holmes, S.
|
|
1995
|
56 |
3-4 |
p. 459-462
4 p.
|
artikel
|
| 14 |
Direct evidence of the two-electron character of DX centers based on co-doping with shallow donors and application of high pressure
|
Baj, M.
|
|
1995
|
56 |
3-4 |
p. 589-593
5 p.
|
artikel
|
| 15 |
Direct measurement of band offsets in GaInP/AlGaInP using high pressure
|
Prins, A.D.
|
|
1995
|
56 |
3-4 |
p. 423-427
5 p.
|
artikel
|
| 16 |
DX centers in n-type GaAs under hydrostatic pressure
|
Zeman, J.
|
|
1995
|
56 |
3-4 |
p. 635-638
4 p.
|
artikel
|
| 17 |
Effect of pressure on the output characteristics of p-GaAs/AlGaAs heterojunction field effect transistor
|
Patel, D.
|
|
1995
|
56 |
3-4 |
p. 669-672
4 p.
|
artikel
|
| 18 |
Effects of the population of localized levels on shallow donor transitions in semiinsulating GaAs
|
Sadowski, Marcin L.
|
|
1995
|
56 |
3-4 |
p. 619-624
6 p.
|
artikel
|
| 19 |
Electron-electron interactions in 2d electron gases: Inelastic light scattering studies at high pressure
|
Goñi, A.R.
|
|
1995
|
56 |
3-4 |
p. 367-373
7 p.
|
artikel
|
| 20 |
Emission energies of Si-DX centers in various AlGaAs microstructures
|
Litwin-Staszewska, E.
|
|
1995
|
56 |
3-4 |
p. 599-602
4 p.
|
artikel
|
| 21 |
Equation of state and phase transitions in AgGaS2 and AgGaSe2
|
Tinoco, T.
|
|
1995
|
56 |
3-4 |
p. 481-484
4 p.
|
artikel
|
| 22 |
First-principle-constant pressure molecular dynamics
|
Bernasconi, M.
|
|
1995
|
56 |
3-4 |
p. 501-505
5 p.
|
artikel
|
| 23 |
Foreword
|
Yu, Peter Y
|
|
1995
|
56 |
3-4 |
p. v-
1 p.
|
artikel
|
| 24 |
High pressure determination of AlGaInP band structure
|
Prins, A.D.
|
|
1995
|
56 |
3-4 |
p. 349-352
4 p.
|
artikel
|
| 25 |
High pressure structural study of AlSb to 50 GPa
|
Greene, Raymond G.
|
|
1995
|
56 |
3-4 |
p. 517-520
4 p.
|
artikel
|
| 26 |
High pressure studies of negative differential resistance in InAs/GaSb resonant conduction heterostructures
|
Khan-Cheema, U.M.
|
|
1995
|
56 |
3-4 |
p. 463-467
5 p.
|
artikel
|
| 27 |
High pressure study of Γ-X mixing in InAs/GaAs quantum dots
|
Li, G.H.
|
|
1995
|
56 |
3-4 |
p. 385-388
4 p.
|
artikel
|
| 28 |
High pressure X-ray and Raman study of ZnSe
|
Greene, Raymond G.
|
|
1995
|
56 |
3-4 |
p. 521-524
4 p.
|
artikel
|
| 29 |
Hydrostatic pressure dependence of the energy gaps of CdTe in the zinc-blende and rocksalt phases
|
González, J.
|
|
1995
|
56 |
3-4 |
p. 335-340
6 p.
|
artikel
|
| 30 |
Hydrostatic pressure effects on the porous silicon luminescence
|
Zeman, J.
|
|
1995
|
56 |
3-4 |
p. 655-661
7 p.
|
artikel
|
| 31 |
III–V Nitrides—thermodynamics and crystal growth at high N2 pressure
|
Grzegory, I.
|
|
1995
|
56 |
3-4 |
p. 639-647
9 p.
|
artikel
|
| 32 |
Investigation of the conduction bandstructure in (001) oriented type II GaAs/AlAs short period superlattices using (100) uniaxial stress
|
Tribe, W.R.
|
|
1995
|
56 |
3-4 |
p. 429-434
6 p.
|
artikel
|
| 33 |
LO-Phonon-plasmon modes in n-GaAs and n-InP under pressure
|
Ernst, S.
|
|
1995
|
56 |
3-4 |
p. 567-570
4 p.
|
artikel
|
| 34 |
Magnetotransport measurements on InAs-GaSb quantum wells with the application of hydrostatic pressure
|
Holmes, S.
|
|
1995
|
56 |
3-4 |
p. 445-451
7 p.
|
artikel
|
| 35 |
Multiplicity and lattice relaxation of the dx center studied by electron emission spectra under pressure
|
Takarabe, K.
|
|
1995
|
56 |
3-4 |
p. 631-634
4 p.
|
artikel
|
| 36 |
New method for studying deformation effects on the optical spectra of quantum wells
|
Trzeciakowski, Witold
|
|
1995
|
56 |
3-4 |
p. 649-654
6 p.
|
artikel
|
| 37 |
New resonant tunneling processes between longitudinal and transverse X-states in GaAs/AlAs double barrier structures beyond the type II transition
|
Klipstein, P.C.
|
|
1995
|
56 |
3-4 |
p. 435-443
9 p.
|
artikel
|
| 38 |
Non-trivial transport phenomena in extremely strained silicon and germanium crystals
|
Baidakov, V.V.
|
|
1995
|
56 |
3-4 |
p. 319-322
4 p.
|
artikel
|
| 39 |
Observation of an optical switching effect in GaAs AlGaAs quantum wells under hydrostatic pressure
|
Cheong, Hyeonsik M.
|
|
1995
|
56 |
3-4 |
p. 375-379
5 p.
|
artikel
|
| 40 |
Phase relationships in mercury telluride under high temperature and pressure
|
Grima, P.
|
|
1995
|
56 |
3-4 |
p. 525-530
6 p.
|
artikel
|
| 41 |
Photoluminescence and Raman spectra of Si/Si1−x Ge x strained superlattices under high pressure
|
Hitomi, S.
|
|
1995
|
56 |
3-4 |
p. 393-396
4 p.
|
artikel
|
| 42 |
Photoluminescence in CdMnTe strained thin films
|
Gregus, J.
|
|
1995
|
56 |
3-4 |
p. 407-410
4 p.
|
artikel
|
| 43 |
Photoluminescence in doped GaN bulk crystal
|
Teisseyre, H.
|
|
1995
|
56 |
3-4 |
p. 353-355
3 p.
|
artikel
|
| 44 |
Photomodulated transmission spectroscopy of In xGa − xAs GaAs MQWs under hydrostatic pressure
|
Shen, S.C.
|
|
1995
|
56 |
3-4 |
p. 363-366
4 p.
|
artikel
|
| 45 |
Polarized photomodulated reflectivity and photoluminescence studies of ordered InGaP2 under pressure
|
Thomas, R.J.
|
|
1995
|
56 |
3-4 |
p. 357-362
6 p.
|
artikel
|
| 46 |
Pressure and temperature dependences of the raman-active phonons in CuGaS2
|
González, J.
|
|
1995
|
56 |
3-4 |
p. 571-575
5 p.
|
artikel
|
| 47 |
Pressure and temperature induced detuning of gain and reflectivity spectra in vertical cavity surface emitting lasers
|
McMahon, C.H.
|
|
1995
|
56 |
3-4 |
p. 663-667
5 p.
|
artikel
|
| 48 |
Pressure as a probe of deep levels and defects in semiconductors: Antisites and oxygen centers in GaAs
|
Samara, G.A.
|
|
1995
|
56 |
3-4 |
p. 625-629
5 p.
|
artikel
|
| 49 |
Pressure dependence of deep centers in II–VI semiconductors: Theory
|
Park, C.H.
|
|
1995
|
56 |
3-4 |
p. 585-588
4 p.
|
artikel
|
| 50 |
Pressure dependence of photoluminescence from ZnSe:Te-(CdSe)1(ZnSe)3 superlattice quantum wells
|
Han, H.X.
|
|
1995
|
56 |
3-4 |
p. 389-391
3 p.
|
artikel
|
| 51 |
Pressure dependence of the fano asymmetry of optical phonons in Zn 1 − x Co x Se and Zn 1 − xFe xSe
|
Bak, J.
|
|
1995
|
56 |
3-4 |
p. 563-566
4 p.
|
artikel
|
| 52 |
Pressure effects on zero-phonon lines in the impurity photoluminescence spectra of 6H SiC crystals
|
Niilisk, A.
|
|
1995
|
56 |
3-4 |
p. 603-606
4 p.
|
artikel
|
| 53 |
Pressure induced rotational ordering phase transition in solid C60
|
Komori, Ryuji
|
|
1995
|
56 |
3-4 |
p. 535-537
3 p.
|
artikel
|
| 54 |
Pressure-induced structural phase transition of CdS microcrystals studied by raman scattering
|
Arai, Toshihiro
|
|
1995
|
56 |
3-4 |
p. 491-494
4 p.
|
artikel
|
| 55 |
Pressure investigation of the quantum hall effect in intrinsic semimetallic InAs/(Ga,In)Sb heterostructures
|
Daly, M.S.
|
|
1995
|
56 |
3-4 |
p. 453-457
5 p.
|
artikel
|
| 56 |
Raman spectroscopic study on the phase transition in solid C60 under high pressure
|
Nishikawa, Kohsuke
|
|
1995
|
56 |
3-4 |
p. 577-579
3 p.
|
artikel
|
| 57 |
Raman spectrum of sulfur under high pressure
|
Yoshioka, Akihito
|
|
1995
|
56 |
3-4 |
p. 581-584
4 p.
|
artikel
|
| 58 |
Raman study of pressure-induced magnetic phase transition in EuSe
|
Hatano, T.
|
|
1995
|
56 |
3-4 |
p. 531-534
4 p.
|
artikel
|
| 59 |
Relation between phase stability and mechanical defects in InGa(Al)As/GaAs and ZnSe/GaAs heterostructures under pressure
|
Ritter, T.M.
|
|
1995
|
56 |
3-4 |
p. 607-613
7 p.
|
artikel
|
| 60 |
Structural studies of III–V and group IV semiconductors at high pressure
|
Nelmes, R.J.
|
|
1995
|
56 |
3-4 |
p. 539-543
5 p.
|
artikel
|
| 61 |
Structural studies of II–VI semiconductors at high pressure
|
Nelmes, R.J.
|
|
1995
|
56 |
3-4 |
p. 545-549
5 p.
|
artikel
|
| 62 |
Structural studies of tetrahedrally-coordinated semiconductors at high pressure—New systematics
|
McMahon, M.I.
|
|
1995
|
56 |
3-4 |
p. 485-490
6 p.
|
artikel
|
| 63 |
The effect of pressure on the band-gap energy in ordered GaInP and AlGaInP grown by MOVPE
|
Kobayashi, T.
|
|
1995
|
56 |
3-4 |
p. 311-317
7 p.
|
artikel
|
| 64 |
The effect of pressure on the luminescence of CdTe/CdMnTe quantum wells
|
Perlin, P.
|
|
1995
|
56 |
3-4 |
p. 415-418
4 p.
|
artikel
|
| 65 |
The effect of Γ-X mixing on the direct excitonic photoluminescence in GaAs/AlGaAs quantum wells
|
Perlin, P.
|
|
1995
|
56 |
3-4 |
p. 411-414
4 p.
|
artikel
|
| 66 |
The light-hole mass in a strained InGaAs/GaAs single quantum well and its pressure dependence
|
Lancefield, D.
|
|
1995
|
56 |
3-4 |
p. 469-473
5 p.
|
artikel
|
| 67 |
The role of interface quality in resonant tunneling between transverse X-states in GaAs/AlAs double barrier structures pressurised beyond the type II transition
|
Smith, J.M.
|
|
1995
|
56 |
3-4 |
p. 475-479
5 p.
|
artikel
|
| 68 |
6th International conference on high pressure semiconductor physics (HPSP VI): Conference details
|
|
|
1995
|
56 |
3-4 |
p. iii-iv
nvt p.
|
artikel
|
| 69 |
Validity of the Sugano-Tanabe diagram for band states in MnO and MnS under high pressure
|
Kobayashi, M.
|
|
1995
|
56 |
3-4 |
p. 341-344
4 p.
|
artikel
|
| 70 |
Γ-X Mixing studied by electroluminescence spectroscopy under hydrostatic pressure in a GaAs/AlAs p-i-n superlattice resonant tunnelling device
|
Kuhn, O.
|
|
1995
|
56 |
3-4 |
p. 403-406
4 p.
|
artikel
|
| 71 |
Zeeman splitting in the extreme quantum limit through cyclotron resonance on two-dimensional GaAs at high pressure
|
Daly, M.S.
|
|
1995
|
56 |
3-4 |
p. 381-384
4 p.
|
artikel
|
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