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                             46 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Application of magnetic resonance techniques to the study of semiconductor surfaces Walters, G.K.
 1960
 14 C p. 43-50
8 p.
 artikel
2 Author index 1960
 14 C p. 299-
1 p.
 artikel
3 Calorimetric determination of the heat of adsorption of oxygen on evaporated films of germanium and silicon Brennan, D.
 1960
 14 C p. 117-123
7 p.
 artikel
4 Chemical configuration of germanium surfaces in aqueous media Harvey, W.W.
 1960
 14 C p. 82-86
5 p.
 artikel
5 Chemical techniques for the investigation of surfaces Kokes, R.J.
 1960
 14 C p. 51-55
5 p.
 artikel
6 Contribution to the theory of the Shockley surface states—I Koutecký, J.
 1960
 14 C p. 241-247
7 p.
 artikel
7 Cross sections of midgap surface states in silicon by pulsed field effect experiment Rupprecht, G.
 1960
 14 C p. 208-213
6 p.
 artikel
8 Displacement processes on germanium surfaces Maxwell, K.H.
 1960
 14 C p. 94-103
10 p.
 artikel
9 Editorial Board 1960
 14 C p. i-
1 p.
 artikel
10 Electrical properties of cleaved germanium surfaces Palmer, D.R.
 1960
 14 C p. 27-32
6 p.
 artikel
11 Electrokinetic behavior of germanium-liquid interfaces Eriksen, W.
 1960
 14 C p. 87-93
7 p.
 artikel
12 Etching and inhibition of the {111} surfaces of the III–V intermetallic compounds: InSb Gatos, H.C.
 1960
 14 C p. 169-174
6 p.
 artikel
13 Fast surface states in germanium at low temperatures Harnik, E.
 1960
 14 C p. 193-199
7 p.
 artikel
14 Galvanomagnetic properties of semiconductor thin films and surface layers Amith, A.
 1960
 14 C p. 271-290
20 p.
 artikel
15 Gas adsorption and surface charge density of germanium surfaces Sparnaaij, M.J.
 1960
 14 C p. 111-116
6 p.
 artikel
16 Impurity conduction of cleaned germanium surfaces at low temperatures Kobayashi, A.
 1960
 14 C p. 37-42
6 p.
 artikel
17 Influence of trapping, diffusion and recombination on carrier concentration fluctuations Lax, M.
 1960
 14 C p. 248-267
20 p.
 artikel
18 Infrared methods applied to surface phenomena Eischens, R.P.
 1960
 14 C p. 56-59
4 p.
 artikel
19 Introductory remarks Brattain, Walter H.
 1960
 14 C p. vii-
1 p.
 artikel
20 Measurements of surface transport phenomena Geballe, T.H.
 1960
 14 C p. 72-74
3 p.
 artikel
21 On the theory of surface states Koutecký, J.
 1960
 14 C p. 233-240
8 p.
 artikel
22 Preface Zemel, Jay N.
 1960
 14 C p. v-
1 p.
 artikel
23 Recent work on surface properties of II–VI semiconductors Lander, J.J.
 1960
 14 C p. 137-141
5 p.
 artikel
24 Section I. Cleaned surfaces of germanium and silicon Handler, P.
 1960
 14 C p. 1-8
8 p.
 artikel
25 Section V. ordinary surfaces of germanium and silicon Aalbers Jr., W.A.
 1960
 14 C p. 181-185
5 p.
 artikel
26 Semiconductor surface properties deduced from free carrier absorption and reflection of infrared radiation Harrick, N.J.
 1960
 14 C p. 60-71
12 p.
 artikel
27 Some aspects of the chemistry of germanium and silicon surfaces Green, Mino
 1960
 14 C p. 77-81
5 p.
 artikel
28 Stain films on silicon Archer, R.J.
 1960
 14 C p. 104-110
7 p.
 artikel
29 Structure and adsorption characteristics of (111) and (11 1 ) surfaces of InSb cleaned by ion bombardment and annealing Haneman, D.
 1960
 14 C p. 162-168
7 p.
 artikel
30 Structures of monolayers of adsorbed gases Germer, L.H.
 1960
 14 C p. 75-76
2 p.
 artikel
31 Studies of auger electrons ejected from germanium by slowly moving positive ions Hagstrum, H.D.
 1960
 14 C p. 33-36
4 p.
 artikel
32 Surface elastic waves in semiconductors Gazis, D.C.
 1960
 14 C p. 268-270
3 p.
 artikel
33 Surface measurements on freshly cleaved silicon p-n junctions Gobeli, G.W.
 1960
 14 C p. 23-26
4 p.
 artikel
34 Surface mobility measurements in germanium Many, A.
 1960
 14 C p. 186-192
7 p.
 artikel
35 Surface properties of pbs photoconductors Zemel, J.N.
 1960
 14 C p. 142-149
8 p.
 artikel
36 Surface properties of vacuum cleaned silicon Law, J.T.
 1960
 14 C p. 9-21
13 p.
 artikel
37 Surface relaxation effects in germanium at reduced temperatures Lindley, D.H.
 1960
 14 C p. 200-207
8 p.
 artikel
38 Surface sensitivity of rectification Bhide, V.G.
 1960
 14 C p. 150-154
5 p.
 artikel
39 Surface states associated with adsorbed atoms Grimley, T.B.
 1960
 14 C p. 227-232
6 p.
 artikel
40 Surface transport theory Greene, R.F.
 1960
 14 C p. 291-298
8 p.
 artikel
41 The charge distribution at the zinc oxide-electrolyte interface Dewald, J.F.
 1960
 14 C p. 155-161
7 p.
 artikel
42 The evaluation of germanium surface treatments Morrison, S.R.
 1960
 14 C p. 214-219
6 p.
 artikel
43 The ion bombardment, oxidation and regeneration of germanium surfaces Wolsky, S.P.
 1960
 14 C p. 124-130
7 p.
 artikel
44 The mechanisms for silicon oxidation in steam and oxygen Ligenza, J.R.
 1960
 14 C p. 131-136
6 p.
 artikel
45 The oxidation of intermetallic compounds—III Rosenberg, A.J.
 1960
 14 C p. 175-180
6 p.
 artikel
46 The surface recombination on silicon contacting an electrolyte Harten, H.U.
 1960
 14 C p. 220-225
6 p.
 artikel
                             46 gevonden resultaten
 
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