nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Boron doped diamond (BDD)-layers on titanium substrates as electrodes in applied electrochemistry
|
Beck, F. |
|
2000 |
45 |
28 |
p. 4691-4695 5 p. |
artikel |
2 |
Electron transport and back reaction in dye sensitised nanocrystalline photovoltaic cells
|
Peter, L.M |
|
2000 |
45 |
28 |
p. 4543-4551 9 p. |
artikel |
3 |
Fast processes at semiconductor–liquid interfaces: reactions at GaAs electrodes
|
Siemoneit, Kerstin |
|
2000 |
45 |
28 |
p. 4577-4589 13 p. |
artikel |
4 |
Formation and corrosion of InP/In contacts in hydrochloric acid
|
Hassel, Achim Walter |
|
2000 |
45 |
28 |
p. 4673-4682 10 p. |
artikel |
5 |
In-situ atomic force microscopy of silicon(100) in aqueous potassium hydroxide
|
Raisch, P |
|
2000 |
45 |
28 |
p. 4635-4643 9 p. |
artikel |
6 |
Is there a limit for the passivation of Si surfaces during anodic oxidation in acidic NH4F solutions?
|
Rappich, J |
|
2000 |
45 |
28 |
p. 4629-4633 5 p. |
artikel |
7 |
Metal deposition on n-Si(111):H electrodes
|
Ziegler, J.C |
|
2000 |
45 |
28 |
p. 4599-4605 7 p. |
artikel |
8 |
Metal sulfide semiconductor electrochemical mechanisms induced by bacterial activity
|
Tributsch, H |
|
2000 |
45 |
28 |
p. 4705-4716 12 p. |
artikel |
9 |
[No title]
|
Kolb, Dieter M |
|
2000 |
45 |
28 |
p. 4541-4542 2 p. |
artikel |
10 |
Reactions of SiH to SiX (X=halogen) bonds at H-terminated Si(111) surfaces in hydrogen halide solutions in the presence of oxidants
|
Zhou, Xiaowen |
|
2000 |
45 |
28 |
p. 4655-4662 8 p. |
artikel |
11 |
Surface analysis of the electropolishing layer on Si(111) in ammonium fluoride solution
|
Lewerenz, H.J |
|
2000 |
45 |
28 |
p. 4615-4627 13 p. |
artikel |
12 |
The influence of oxidizing agents on etching and passivation of silicon in KOH solution
|
Xia, X.H |
|
2000 |
45 |
28 |
p. 4645-4653 9 p. |
artikel |
13 |
The preparation of flat H–Si(111) surfaces in 40% NH4F revisited
|
Allongue, Philippe |
|
2000 |
45 |
28 |
p. 4591-4598 8 p. |
artikel |
14 |
The relationship between squaraine dye surface morphology and sensitization behavior on SnS2 electrodes
|
Takeda, Norihiko |
|
2000 |
45 |
28 |
p. 4559-4564 6 p. |
artikel |
15 |
TiO2 photocatalysts and diamond electrodes
|
Fujishima, A |
|
2000 |
45 |
28 |
p. 4683-4690 8 p. |
artikel |
16 |
Ultrafast dynamics of light-induced electron injection from a molecular donor into the wide conduction band of a semiconductor as acceptor
|
Willig, F |
|
2000 |
45 |
28 |
p. 4565-4575 11 p. |
artikel |
17 |
Use of the bending-beam-method for the study of the anodic oxidation of Si in dilute fluoride media
|
Decker, F |
|
2000 |
45 |
28 |
p. 4607-4613 7 p. |
artikel |
18 |
Variation of carboxylate-functionalized cyanine dyes to produce efficient spectral sensitization of nanocrystalline solar cells
|
Ehret, A |
|
2000 |
45 |
28 |
p. 4553-4557 5 p. |
artikel |
19 |
Wavelength-dependent switching of the photocurrent direction at the surface of molecular semiconductor electrodes based on orbital-confined excitation and transfer of charge carriers from higher excited states
|
Schlettwein, D |
|
2000 |
45 |
28 |
p. 4697-4704 8 p. |
artikel |
20 |
XPS analysis of wet chemical etching of GaAs(110) by Br2–H2O: comparison of emersion and model experiments
|
Beerbom, Martin |
|
2000 |
45 |
28 |
p. 4663-4672 10 p. |
artikel |