| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Adsorption and partial charge transfer at diamond electrodes—I. Phenomenology: an impedance study
|
Sakharova, Alla
|
|
1992
|
37 |
5 |
p. 973-978
6 p.
|
artikel
|
| 2 |
Analysis of current—potential characteristics of n- and p-type semiconductor electrodes
|
Meissner, Dieter
|
|
1992
|
37 |
5 |
p. 799-809
11 p.
|
artikel
|
| 3 |
Anodic oxides on silicon
|
Lewerenz, H.J.
|
|
1992
|
37 |
5 |
p. 847-864
18 p.
|
artikel
|
| 4 |
Chemical dissolution of zinc oxide crystals in aqueous electrolytes—An analysis of the kinetics
|
Gerischer, H.
|
|
1992
|
37 |
5 |
p. 827-835
9 p.
|
artikel
|
| 5 |
Dynamic electrolyte electroreflectance measurements for the in situ detection of flatband potential shift
|
Salvador, P.
|
|
1992
|
37 |
5 |
p. 957-971
15 p.
|
artikel
|
| 6 |
Editorial
|
Peter, Laurence M.
|
|
1992
|
37 |
5 |
p. 779-
1 p.
|
artikel
|
| 7 |
Electrochemical and optical studies of silicon dissolution in ammonium fluoride solutions
|
Blackwood, D.J.
|
|
1992
|
37 |
5 |
p. 889-896
8 p.
|
artikel
|
| 8 |
Electrochemical calendar
|
|
|
1992
|
37 |
5 |
p. 983-986
4 p.
|
artikel
|
| 9 |
Experimental investigation of charge transfer at the semiconductor/electrolyte junction
|
Allongue, Philippe
|
|
1992
|
37 |
5 |
p. 781-797
17 p.
|
artikel
|
| 10 |
Ionic processes through the interfacial oxide in the anodic dissolution of silicon
|
Chazalviel, J.-N.
|
|
1992
|
37 |
5 |
p. 865-875
11 p.
|
artikel
|
| 11 |
Microwave photoelectrochemistry
|
Schlichthörl, G.
|
|
1992
|
37 |
5 |
p. 919-931
13 p.
|
artikel
|
| 12 |
Paper in press
|
|
|
1992
|
37 |
5 |
p. 979-981
3 p.
|
artikel
|
| 13 |
Photocurrent multiplication at p-type semiconductor electrodes
|
Kelly, J.J.
|
|
1992
|
37 |
5 |
p. 909-918
10 p.
|
artikel
|
| 14 |
Photoelectrochemical etching of silicon
|
Levy-Clement, Claude
|
|
1992
|
37 |
5 |
p. 877-888
12 p.
|
artikel
|
| 15 |
Photoelectrochemical imaging of sub-monolayer lead deposits on n-GaAs
|
Peat, R.
|
|
1992
|
37 |
5 |
p. 933-942
10 p.
|
artikel
|
| 16 |
(Photo)electrochemistry: a suitable tool for investigating wet etching processes on III–V semicondutors
|
Goossens, H.H.
|
|
1992
|
37 |
5 |
p. 811-826
16 p.
|
artikel
|
| 17 |
Recent advances in high quantum yield dye sensitization of semiconductor electrodes
|
Parkinson, B.A.
|
|
1992
|
37 |
5 |
p. 943-948
6 p.
|
artikel
|
| 18 |
Recombination in semiconductor electrodes: investigation by the electrical impedance method
|
Vanmaekelbergh, D.
|
|
1992
|
37 |
5 |
p. 837-846
10 p.
|
artikel
|
| 19 |
Silicon photoelectrodes modified with ultrafine metal islands
|
Nakato, Yoshihiro
|
|
1992
|
37 |
5 |
p. 897-907
11 p.
|
artikel
|
| 20 |
The International Society of Electrochemistry
|
|
|
1992
|
37 |
5 |
p. i-x
nvt p.
|
artikel
|
| 21 |
Theory of electroreflectance and photoreflectance of semiconductors
|
Hamnett, A.
|
|
1992
|
37 |
5 |
p. 949-956
8 p.
|
artikel
|
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