Synthesis, AACVD and X-ray crystallographic structures of group 13 monoalkoxometallanes
Titel:
Synthesis, AACVD and X-ray crystallographic structures of group 13 monoalkoxometallanes
Auteur:
Knapp, Caroline E. Pemberton, Leah Carmalt, Claire J. Pugh, David McMillan, Paul F. Barnett, Sarah A. Tocher, Derek A.
Verschenen in:
Main group chemistry
Paginering:
Jaargang 9 (2010) nr. 1-2 pagina's 31-40
Jaar:
2010-03-28
Inhoud:
The group 13 monoalkoxometallanes [Me_{2}Ga(OC(CH_{3})_{2}CH_{2}OMe)]_{2} (1) and [Me_{2}In(OCH(CH_{3})CH_{2}OMe)]_{2} (2), incorporating donor functionalised alkoxides, were synthesised from the reaction of GaMe_{3} or InMe_{3} with ROH (R=C(CH_{3})_{2}CH_{2}OMe (1); R=CH(CH_{3})CH_{2}OMe (2)) in toluene. X-ray crystallography showed that both compounds adopt dimeric structures with a planar M_{2}O_{2} ring, and each group 13 atom is coordinated in a distorted trigonal bipyramidal geometry. The AACVD reaction of GaMe_{3} and ROH (R =C(CH_{3})_{2}CH_{2}OMe, CH_{2}CH_{2}OMe, CH_{2}CH_{2}NMe_{2}) resulted in the formation of thin films of Ga_{2}O_{3} on glass substrates at 450°C. The gallium oxide films were analyzed by scanning electron microscopy, X-ray powder diffraction, energy dispersive analysis of X-rays, wavelength dispersive analysis of X-rays and X-ray photoelectron spectroscopy. This CVD technique offers a rapid, convenient route to Ga_{2}O_{3}, which involves the in situ formation of dimethylgallium alkoxides, of the type [Me_{2}Ga(μ-OR)]_{2} similar to compound 1.