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| Titel: |
Microwave Impedance Measurement for Nanoelectronics |
| Auteur: |
M. Randus K. Hoffmann |
| Verschenen in: |
Radioengineering |
| Paginering: | Jaargang 20 (2011) nr. 1 pagina's 276-283 |
| Jaar: |
2011 |
| Inhoud: |
The rapid progress in nanoelectronics showed an urgent need for microwave measurement of impedances extremely different from the 50Ω reference impedance of measurement instruments. In commonly used methods input impedance or admittance of a device under test (DUT) is derived from measured value of its reflection coefficient causing serious accuracy problems for very high and very low impedances due to insufficient sensitivity of the reflection coefficient to impedance of the DUT. This paper brings theoretical description and experimental verification of a method developed especially for measurement of extreme impedances. The method can significantly improve measurement sensitivity and reduce errors caused by the VNA. It is based on subtraction (or addition) of a reference reflection coefficient and the reflection coefficient of the DUT by a passive network, amplifying the resulting signal by an amplifier and measuring the amplified signal as a transmission coefficient by a common vector network analyzer (VNA). A suitable calibration technique is also presented. |
| Uitgever: |
Spolecnost pro radioelektronicke inzenyrstvi (provided by DOAJ) |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
Details van artikel 31 van 54 gevonden artikelen
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