|
| << vorige | volgende >> |
Tijdschrift beschrijving
Alle jaargangen van het bijbehorende tijdschrift
Alle afleveringen van het bijbehorende jaargang
Alle artikelen van de bijbehorende aflevering
Details van artikel 59 van 87 gevonden artikelen
| Titel: |
Simulated exposure of titanium dioxide memristors to ion beams |
| Auteur: |
Marjanović Nada S. Vujisić Miloš Lj. Stanković Koviljka Đ. Despotović Dejan Osmokrović Predrag V. |
| Verschenen in: |
Nuclear technology & radiation protection |
| Paginering: | Jaargang 25 (2010) nr. 2 pagina's 120-125 |
| Jaar: |
2010 |
| Inhoud: |
The effects of exposing titanium dioxide memristors to ion beams are investigated through Monte Carlo simulation of particle transport. A model assuming ohmic electronic conduction and linear ionic drift in the memristor is utilized. The memristor is composed of a double-layer titanium dioxide thin film between two platinum electrodes. Obtained results suggest that a significant generation of oxygen ion/oxygen vacancy pairs in the oxide is to be expected along ion tracks. These can influence the device’s operation by lowering the resistance of the stoichiometric oxide region and the mobility of the vacancies. Changes induced by ion irradiation affect the current-voltage characteristic and state retention ability of the memristor. If the displaced oxygen ions reach the platinum electrodes, they can form the O2 gas and cause a permanent disruption of memristor functionality. |
| Uitgever: |
VINČA Institute of Nuclear Sciences (provided by DOAJ) |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
Details van artikel 59 van 87 gevonden artikelen
| << vorige | volgende >> |