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| Titel: |
Tuning Semiconductor Laser Diode Lasing Frequency and Narrowing the Laser Linewidth Using External Oscillating Driving Field |
| Auteur: |
H.S. Ashour |
| Verschenen in: |
Journal of applied sciences |
| Paginering: | Jaargang 6 (2006) nr. 10 pagina's 2209-2216 |
| Jaar: |
2006 |
| Inhoud: |
In this study, we propose a new method to tune the semiconductor laser lasing frequency and reducing the laser linewidth using an external deriving field. We redeveloped Floquet S-matrix which determines the transmission probabilities and the shape and position of the induced quasibound state, which accumulated incident electrons. We explored the S-matrix numerically for various system parameters. We found that the oscillating field amplitude V1 plays a curial rule in defining the profile of electrons accumulations in the quasibound state and the field`s strength made sift the position of the quasibound state. This sift in the bound state energy due field`s strength is used to tune the lasing frequency and the output of the semiconductor laser linewidth is improved by changing the field`s amplitude the deriving field. By narrowing down the electron accumulations profile the laser linewidth would be narrower. |
| Uitgever: |
Asian Network for Scientific Information (provided by DOAJ) |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
Details van artikel 58 van 62 gevonden artikelen
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