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| Titel: |
Electrical Properties of Amorphous Pb-Ge-Se Thin Films |
| Auteur: |
A.K. Pattanaik A. Srinivasan |
| Verschenen in: |
Journal of applied sciences |
| Paginering: | Jaargang 5 (2005) nr. 1 pagina's 1-4 |
| Jaar: |
2005 |
| Inhoud: |
Amorphous thin films of PbxGe42-xSe58 (3<u><</u>x<u><</u>15) and Pb20GexSe80-x (17<u><</u>x<u><</u>24) have been prepared by thermal evaporation of bulk glasses of the same composition on glass substrates. Thermoelectric power measurements showed that p-type to n-type transition occurred in PbxGe42-xSe58 at x=9 at.wt.% Pb and in Pb20GexSe80-x at x=21 at.wt.% Ge. The dc electrical resistivity of these samples was measured in the temperature range of 340 to 400 K. The sheet resistance (ρs) and the activation energy for electrical conduction (Eσ) of the films decreased with increasing Pb content in the PbxGe42-xSe58 (3<u><</u>x<u><</u>15) series, whereas ρs and Eσ exhibited a maximum at 21 at.wt.% of Ge in the Pb20GexSe80-x (17<u><</u>x<u><</u>24) series. The electronic conduction in the Pb-Ge-Se films in the measured temperature range has been attributed to the band transport mechanism. |
| Uitgever: |
Asian Network for Scientific Information (provided by DOAJ) |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
Details van artikel 31 van 80 gevonden artikelen
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