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Details van artikel 11 van 36 gevonden artikelen
| Titel: |
Design and Simulation of Microelectromechanical SystemCapacitive Shunt Switches |
| Auteur: |
Haslina Jaafar Othman Sidek Azman Miskam Shukri Korakkottil |
| Verschenen in: |
American journal of engineering and applied sciences |
| Paginering: | Jaargang 2 (2009) nr. 4 pagina's 655-660 |
| Jaar: |
2009 |
| Inhoud: |
Problem statement: RF MEMS switch is one of MEMS area that creates devices that havegreat potential to improve the performance of communication circuits and systems and enables therealization of micro size mechanical switches embedded in electronics devices. The low voltageswitches are necessary due to their compatibility of standard IC technology in RF application andmicroelectronics systems. In realizing MEMS switches with low actuation voltage, spring constant ofbeam must be reduced. Design and simulation of capacitive RF MEMS shunt switches with regards tothe pull in voltage were presented. <br >Approach: Design and simulation had been done by usingcommercial simulation package, CoventorWare 2006. Several switches were designed with differentmeander spring beams to obtain lower voltage actuations using Architect Module in CoventorWare2006. <br >Results: Results verified with Finite Element Method (FEM) and simple mathematicalmodeling. Each design gave different voltage actuations. The lowest actuation voltage simulated was1.9 V. Average difference of simulated and calculated values was about 16%. This is because nofringing field was included in calculation. Finite Element Method (FEM) analysis was done for switchC. Results showed that lower voltage can be obtained by using serpentine spring which lowers thespring constant and pull-in voltage as well. The lower pull-in time was primarily due to its very smalldimensions and mass <br >Conclusion: Low-voltage capacitive shunt RF MEMS switches were designedand simulated. These switches had actuation voltages of 1.9-7.0 V depending on the serpentine design.The other performance particularly switch C had a pull-in time of 15 μ sec after a voltage of 0-20 Vwas applied and the resonant frequency is 3153.1 Hz. |
| Uitgever: |
Science Publications (provided by DOAJ) |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
Details van artikel 11 van 36 gevonden artikelen
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