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| Titel: |
Cut-off frequency and transit time analysis in short geometry polysilicon thin-film transistors |
| Auteur: |
Chopra, Sonia Gupta, R. S. |
| Verschenen in: |
International journal of electronics |
| Paginering: | Jaargang 88 (2001) nr. 2 pagina's 127-143 |
| Jaar: |
2001-02-01 |
| Inhoud: |
An accurate model for the drain characteristics, transconductance, cut-off frequency and transit time of a short geometry polysilicon thin film transistor (poly-Si TFT) is presented. An accurate threshold voltage and field dependent mobility are the key parameters in determining the above-threshold characteristics. The current-voltage characteristics of the device show an excellent agreement with experimental results. The transconductance for both linear and saturation regions is calculated and its variation with channel length, drain and gate voltages is studied. The total gate capacitance including the geometric capacitance and the fringing capacitance is also evaluated and simple closed form expressions for the cut-off frequency and transit time are obtained. A high cut-off frequency is achieved, which is important in realizing the device for millimetre and microwave frequency applications. |
| Uitgever: |
Taylor & Francis |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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