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Details for article 2 of 22 found articles
| Title: |
Analytical determination of the emitter saturation current in ultra-shallow silicon junctions |
| Author: |
Silard, Andrei P. Duţă, Miron J. |
| Appeared in: |
International journal of electronics |
| Paging: | Volume 68 (1990) nr. 5 pages 705-719 |
| Year: |
1990-05-01 |
| Contents: |
Simple analytical relations expressing the influence of electric field strength E prevailing in the heavily-doped quasi-neutral layer of ultra-shallow (xj = 01 to 0.3 μm) silicon junctions on the emitter component of the reverse saturation current density J0 are obtained. It is shown physically and is demonstrated mathematically that, owing to the peculiarities of such junctions, an additional field-based current term appears in the Shockley relation for the emitter component of the saturation current. For the usual values of drift velocities encountered in the heavily-doped layer of ultra-shallow junctions, the field-based term enhances substantially the emitter component of the saturation current. The particular forms of the analytical expression obtained for different practical cases of interest are detailed. The electric-field-free case is also investigated, and simple analytical expressions for emitter saturation current are derived as a function of practical values of the surface recombination velocity S. The main physical implications of the basic findings and of the quantitative evaluations performed are also outlined. |
| Publisher: |
Taylor & Francis |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 2 of 22 found articles
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