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                                       Details for article 2 of 22 found articles
 
 
  Analytical determination of the emitter saturation current in ultra-shallow silicon junctions
 
 
Title: Analytical determination of the emitter saturation current in ultra-shallow silicon junctions
Author: Silard, Andrei P.
Duţă, Miron J.
Appeared in: International journal of electronics
Paging: Volume 68 (1990) nr. 5 pages 705-719
Year: 1990-05-01
Contents: Simple analytical relations expressing the influence of electric field strength E prevailing in the heavily-doped quasi-neutral layer of ultra-shallow (xj = 01 to 0.3 μm) silicon junctions on the emitter component of the reverse saturation current density J0 are obtained. It is shown physically and is demonstrated mathematically that, owing to the peculiarities of such junctions, an additional field-based current term appears in the Shockley relation for the emitter component of the saturation current. For the usual values of drift velocities encountered in the heavily-doped layer of ultra-shallow junctions, the field-based term enhances substantially the emitter component of the saturation current. The particular forms of the analytical expression obtained for different practical cases of interest are detailed. The electric-field-free case is also investigated, and simple analytical expressions for emitter saturation current are derived as a function of practical values of the surface recombination velocity S. The main physical implications of the basic findings and of the quantitative evaluations performed are also outlined.
Publisher: Taylor & Francis
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2 of 22 found articles
 
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