Dynamic behaviour of double-interdigitated (TIL) GTO thyristors under resistive-inductive loads
Titel:
Dynamic behaviour of double-interdigitated (TIL) GTO thyristors under resistive-inductive loads
Auteur:
Silard, Andrei Kosa, Barna
Verschenen in:
International journal of electronics
Paginering:
Jaargang 58 (1985) nr. 2 pagina's 295-305
Jaar:
1985-02-01
Inhoud:
The paper focuses on the peculiar dynamic behaviour of the recently developed 8 mm2 TO-220-packaged, high-voltage, double-interdigitated (or rwo interdigi-tation levels—TIL) GTO thyristor. This novel power device was rated under both slightly and heavily inductive resistive loads, i.e. close to the real conditions encountered in practical power circuits employing GTO thyristors. Emphasis is laid on the ability of TIL GTOs to switch safely, with minimum power losses, a certain amount of anode current under high-voltage conditions and high commutation frequencies. The merits of TIL GTO thyristors are analysed in terms of their reliability and switching efficiency, which include the total power losses (conduction and switching losses), turn-on and turn-off gains and the switching speed. It is shown that thanks to their built-in self-protective features, these novel GTOs possess an enhanced current-handling capability at commutation frequencies up to 50kHz under extremely tough load conditions. The main implications of the results for power applications are outlined.
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