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Details for article 5 of 18 found articles
| Title: |
Breakdown in concentration profile diodes |
| Author: |
Ghatol, A. A. Sundarsingh, V. P. |
| Appeared in: |
International journal of electronics |
| Paging: | Volume 55 (1983) nr. 4 pages 639-646 |
| Year: |
1983-10-01 |
| Contents: |
Reverse breakdown capability or a concentration profiled p+ n n+ diode depends upon the surface concentration at the contra and the edge region. To study the effect of various concentration profiles on the breakdown capability, the electric field distribution in the semiconductor and the dielectric is theoretically computed. These theoretical computations are compared with the experimentally determined values. Extremely high breakdown voltages have been achieved in plane p+ n n+ junctions using this technique. The desired concentration profiles are achieved using spin-on sources for boron diffusion. These sources require a curing time, alter preparation, to yield reproducible uniform impurity eurfece concentration. To study the stj-ucturoJ changes taking place in the liquid phase during the curing time, IR spectra of the liquid spin-on source are presented. It is concluded that the interaction between B-O and Si-OH in the liquid phase is responsible for achieving uniform surface concentration, Further, if concentration profiling is used for reducing the surface electric field, one can eliminate the mechanical bevelling or chemical etching step. |
| Publisher: |
Taylor & Francis |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 5 of 18 found articles
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