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Details for article 4 of 14 found articles
| Title: |
A study of thermal-voltage memory effects in M-I-M structures with co-evaporated SiO/B2O3 as the insulator material |
| Author: |
Hogarth, C. A. Kompany, A. |
| Appeared in: |
International journal of electronics |
| Paging: | Volume 53 (1982) nr. 4 pages 301-309 |
| Year: |
1982-10-01 |
| Contents: |
Thin-film sandwich structures of Cu-SiO/B2O3-Cu with dielectric thicknesses of the order of 2000 A were prepared by vacuum evaporation, and circulating and emission currents were measured as functions of the applied voltage. A thermal-voltage memory effect was recorded and the relaxation of the high-impedance memory state was studied. The results are interpreted in terms of the filamentary growth theory. |
| Publisher: |
Taylor & Francis |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 4 of 14 found articles
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