|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 4 of 12 found articles
| Title: |
Chemical-bond model for gold surface states in gold-doped silicon/silicon dioxide structures |
| Author: |
Moghal, G. R. |
| Appeared in: |
International journal of electronics |
| Paging: | Volume 53 (1982) nr. 3 pages 271-279 |
| Year: |
1982-09-01 |
| Contents: |
A chemical-bond model for the formation of the gold surface states at the silicon/silicon dioxide interface is suggested. For analysis of the gold surface states at the interface, a three-layer model of a real surface is employed. Gold forms Au-Si, an intermetallic compound, when diffused into silicon from the back of the MOS device, and has negative charge character at the silicon/silicon dioxide interface. But when gold diffuses through the oxide, it acts as a positive ion embedded in the oxide and introduces positive charge at the silicon/silicon dioxide interface. |
| Publisher: |
Taylor & Francis |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 4 of 12 found articles
| << previous | next >> |