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Details for article 11 of 12 found articles
| Title: |
Thermally stimulated current measurements applied to silver-doped silicon† |
| Author: |
Smith, P. C. Milnes, A. G. |
| Appeared in: |
International journal of electronics |
| Paging: | Volume 32 (1972) nr. 6 pages 697-709 |
| Year: |
1972-06-01 |
| Contents: |
The theory of thermally stimulated current in semiconductors is reviewed and experimental results for silicon are discussed. Slight variations in experimental conditions can result in vastly different thermally stimulated current curves. It is further demonstrated that experimental results accurate to 0.l°K are necessary to give useful results for energy level and capture cross section. By applying the technique to silver-doped silicon of known doping, it is possible to demonstrate reasonably good agreement between theory and experiment. However, it is concluded that, in general, for thermally stimulated current measurements extreme care is necessary if intorpretablo data are to be produced |
| Publisher: |
Taylor & Francis |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 11 of 12 found articles
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