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Details for article 1 of 5 found articles
| Title: |
A Theoretical Investigation of the D.C. and Small Signal Characteristics of the Low Impedance Region of pnpn Diodes and Triodes† |
| Author: |
Fulop, W. |
| Appeared in: |
International journal of electronics |
| Paging: | Volume 20 (1966) nr. 5 pages 399-429 |
| Year: |
1966-05-01 |
| Contents: |
Employing established transistor theory the approximate current—voltage characteristics of pnpn diodes and triodes are obtained by considering these to consist of two transistors working in tandem under saturated conditions. The singular point (δφT/δI0) = 0 referred to as voltage minimum (VM) is then investigated and an expression for the current at that point obtained both for two and three-terminal operation in terms of d.c. alphas and their variation with current. It is shown that for a given gate current this point lies above in current to the point where the centre junction passes through zero bias. The roots of these VM equations, which are quadratic in current, are investigated and then located for positive, zero and negative gate currents on a hypothetical but what appears to be a reasonable plot of the sum of d.c. alpha-values versus load current. Well in the forward 'on' region the current—voltage equations lend themselves to small signal analysis and equations are obtained which lead to a self-consistent system of parametric curves. Measurements only confirmed some of the features predicted and departure from theory is ascribed to large bulk series resistances. |
| Publisher: |
Taylor & Francis |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 1 of 5 found articles
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