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Details van artikel 27 van 41 gevonden artikelen
| Titel: |
RESISTANCE SWITCHING EFFECT OF Ag/Ln1-xCaxMnO3/Pt SANDWICH STRUCTURE |
| Auteur: |
Wang, Q. Dong, R. Shang, D. S. Chen, T. L. Li, X. M. Chen, L. D. |
| Verschenen in: |
Integrated ferroelectrics |
| Paginering: | Jaargang 78 (2006) nr. 1 pagina's 207-213 |
| Jaar: |
2006-11-01 |
| Inhoud: |
Ag/Ln1-xCaxMnO3/Pt (Ln = Pr, La, X = 0.3) sandwich structures showing electric-pulse induced reversible resistance switching properties provide a route for a new resistance random access memory (RRAM), because the electric-pulse induced high-resistance state and low-resistance state can be assimilated to logic 1 and 0 in RRAM systems, respectively. In this work the fatigue and the retention behavior of the electric-pulse induced resistance states have been studied. It is found that the retention properties of the EPIR materials can be modified by post-annealing of the materials and by the inner adjusting of the pulse applied mode. Moreover, the EPIR devices can be optimized by initializing using voltage sweep or pulse sweep circles before application to possess the appropriate original resistance and the stable resistance switching behavior. |
| Uitgever: |
Taylor & Francis |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
Details van artikel 27 van 41 gevonden artikelen
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