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| Titel: |
Investigation on various insulator layers for MFIS capacitors |
| Auteur: |
Kim, Taeho Kim, Hyung-seok Koo, June-mo Min, Hyungsub Kim, Jiyoung |
| Verschenen in: |
Integrated ferroelectrics |
| Paginering: | Jaargang 30 (2000) nr. 1-4 pagina's 121-128 |
| Jaar: |
2000-10-01 |
| Inhoud: |
Effects of insulator layers of Metal(Au)/Ferroelectrics(PZT)/Insulator/Si (MFIS) structure capacitors are investigated for non-destructive type non-volatile memory device applications. Various high dielectric oxide layers such as Al2O3, Ta2O5, TiO2 and ZrO2 were fabricated by reactive sputtering as insulating layers. The oxide insulators give significant impacts on the morphologies of PZT layer and the properties of capacitors. It is noted that the oxide layers with small thermal expansions (<6x10-6/°C) coefficient caused cracks on PZT films during PZT crystallization annealing. The effects of insulators as a diffusion barrier are also comparatively studied using Auger electron spectroscopy. In addition, the characteristics of high dielectric solid solution, such as titanium oxide-zirconium oxide, are also studied. |
| Uitgever: |
Taylor & Francis |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
Details van artikel 13 van 35 gevonden artikelen
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