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Details for article 19 of 23 found articles
| Title: |
Raman, X-ray and electrical properties of MOD PZT/PLZT thin films |
| Author: |
Zhu, W. Tse, M. S. Lu, W. |
| Appeared in: |
Integrated ferroelectrics |
| Paging: | Volume 12 (1996) nr. 2-4 pages 167-175 |
| Year: |
1996-10-01 |
| Contents: |
Ferroelectric PZT/PLZT thin films have been fabricated using the metallo-organic precursor compounds. The structural development, spectroscopic and dielectric properties of these films have been investigated using atomic force microscopy (AFM), X-ray diffraction, Raman scattering and dielectric measurements. Experimental results show that Raman spectroscopy is an effective tool of monitoring the structural development of the small sized PZT films in the tetragonal phase field. Dielectric characteristics have been improved by the rapid thermal processing approach. A rosette growth model is proposed to explain the observation of the tri-intersection of the perovskite phase in PZT films. |
| Publisher: |
Taylor & Francis |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 19 of 23 found articles
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