|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 17 of 23 found articles
| Title: |
Preparation of Zr-rich PZT and La-doped PbTiO3 thin films by RF magnetron sputtering and their properties for pyroelectric applications |
| Author: |
Wang, Wensheng Chen, Zhiming Adachi, Masatoshi Kawabata, Akira |
| Appeared in: |
Integrated ferroelectrics |
| Paging: | Volume 12 (1996) nr. 2-4 pages 251-261 |
| Year: |
1996-10-01 |
| Contents: |
Zr-rich PZT and La-doped PT films were fabricated on a PLT/Pt/Ti/SiO2/Si or Pt/Ti/SiO2/Si substrate by an RF planar magnetron sputtering equipment using powder targets with compositions of PbZr094Ti0.06O3, PbZr0.92Ti0.08O3 and Pb0.85La0.15 Ti0.96O3 with excess PbO of 20 mol%. The dielectric constants of PZT and PLT films showed anomalies at the transition temperatures of around 246 and 300°C, and their dielectric constants at room temperature were 350 and 1070, respectively. Significant pytroelectric currents were observed in both as-grown PZT and PLT films even without a poling treatment. The pyroelectric coefficients of those films were 10 and 30 nC/cm2K, respectively. Therefore, Zr-rich PZT and [111]-oriented PLT films sputtered on Pt/Ti/SiO2/Si substrates possess desirable properties for potential applications to pyroelectric devices. |
| Publisher: |
Taylor & Francis |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 17 of 23 found articles
| << previous | next >> |