GaInAsP/InP double-heterostructure lasers for fiber odtic communications
Titel:
GaInAsP/InP double-heterostructure lasers for fiber odtic communications
Auteur:
Hsieh, J. J. Shen, C. C.
Verschenen in:
Fiber & integrated optics
Paginering:
Jaargang 1 (1978) nr. 4 pagina's 357-368
Jaar:
1978
Inhoud:
This paper reviews the performance of GaInAsP/InP double-heterostructure diode lasers prepared by liquid-phase epitaxy. These lasers have the advantage that exact lattice-matching between the GaIn-ASP active region and the InP substrate is possible for quaternary alloy compositions giving emission wavelengths over a range that includes 1.1-1.3 μm, the optimum region for optical communication systems utilizing fused silica fibers. Continuous operation at room temperature has been achieved in this region for proton-defined stripe (PDS), oxide-defined stripe (ODs), and junction-defined, buried-stripe (JDBS) lasers. The first three PDS devices to be life-tested have already logged over 6,000, 5,700, and 4,000 h, respectively, of cw operation at room temperature without any degradation.
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