|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 3 of 5 found articles
| Title: |
Ferroelectricity in DTAAP |
| Author: |
Shashikala, M. N. Sangunni, K. S. Bhat, H. L. |
| Appeared in: |
Ferroelectrics letters section |
| Paging: | Volume 9 (1988) nr. 1 pages 19-25 |
| Year: |
1988-07-01 |
| Contents: |
The results of dielectric studies of deuterated TAAP grown at different temperatures are reported. These results together with the Raman spectral data show that 100% deuteration is possible only if the crystals are grown at low temperatures. The transition temperature continuously increases with increasing deuterium content from 45°C for TAAP to ∼ 87°C for DTAAP indicating that hydrogen bonds play an important role in the ferroelectric transition of this crystal. |
| Publisher: |
Taylor & Francis |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 5 found articles
| << previous | next >> |