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| Titel: |
A low temperature preparation of Sr0.7Bi2 x.Ta2O9 thin films on SiO2/Si by pulsed laser deposition for application of metal-ferroelectric-insulator-semiconductor structure |
| Auteur: |
Noda, Minoru Sugiyama, Hideki Okuyama, Masanori |
| Verschenen in: |
Ferroelectrics letters section |
| Paginering: | Jaargang 26 (1999) nr. 1-2 pagina's 17-28 |
| Jaar: |
1999 |
| Inhoud: |
Preferentially (105)-oriented Sr0.7B12.8Ta2O9 thin films on SiO2/n-Si(100) have been prepared by Pulsed Laser Deposition (PLD) at low temperature as low as 350°C, which is the lowest process temperature for growing SrxBiyTa2O9(SBTO) ferroelectric thin films. Insulating properties of the SBTO film have been improved by lowering the process temperature or by increasing Sr/Bi atomic ratio from 0.7/2.8 to 0.7/2.0. After applying the low leakage SBTO films to Metal-Ferroelectric-Insulator-Semiconductor diode structures, it is finally observed that their C-V curves have counterclockwise dielectric hysteresis that indicates the films' ferroelectric hysteresis sufficiently control the Si surface potential. A low temperature process in preparing ferroelectric thin film and Sr-deficient and Bi-excess SBTO thin film by PLD method are very effective and promising for realizing an excellent MFIS FET structure. |
| Uitgever: |
Taylor & Francis |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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