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                                       Details for article 7 of 8 found articles
 
 
  Sol-gel derived SrBi2Ta2O9 thin films and electrical properties
 
 
Title: Sol-gel derived SrBi2Ta2O9 thin films and electrical properties
Author: Yamakawa, K.
Ravichandran, D.
Bhalla, A. S.
Trolier-McKinstry, S.
Dougherty, J. P.
Roy, R.
Appeared in: Ferroelectrics letters section
Paging: Volume 22 (1996) nr. 1-2 pages 41-45
Year: 1996-11-01
Contents: Ferroelectric SrBi2Ta2O9 thin films were prepared from Sr metals, Ta-ethoxide and Bi, 2-ethylhexanoate. The films were prepared from both stoichiometric and 10 mol% Bi rich solutions. The stoichiometric film crystallized at 800°C had a spontaneous polarization value of 5 μC/cm2. The Bi rich film had lower crystallinity, finer grains and a smaller polarization. It was found to be necessary to anneal the films at high temperatures or for long time to achieve ferroelectricity. The non-crystalline states of sol-gel derived films differ from that observed in films deposited by physical vapor deposition. Crack free films were produced with the film thicknesses of 0.4 μm.
Publisher: Taylor & Francis
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 7 of 8 found articles
 
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