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                                       Details for article 2 of 37 found articles
 
 
  Analysis of electrical switching in sub-micron KNO3 thin films
 
 
Title: Analysis of electrical switching in sub-micron KNO3 thin films
Author: Godfrey, R. Bruce
Scott, J. F.
Meadows, H. Brett
Golabi, Manooch
Araujo, C.
McMillan, L.
Appeared in: Ferroelectrics letters section
Paging: Volume 5 (1986) nr. 6 pages 167-172
Year: 1986-04-01
Contents: The coercive field of KNO3 films 75 to 400nm thick is found to satisfy the empirical relation EC ∼d -1.3, where d is the thickness, in agreement with earlier work on BaTiO3 by Stadler and on TGS by Hadni et al. The switching times for large area devices (20Ox200μm) vary as E-1.5 in agreement with early work on BaTiO3 by Stadler and Zachmanidis, and indicate that the limiting parameter is the velocity of domain growth perpendicular t o the applied field.
Publisher: Taylor & Francis
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2 of 37 found articles
 
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