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Details for article 23 of 127 found articles
| Title: |
Defect-induced phase transitions in YAl 3 (BO 3 ) 4 :Nd (NYAB) crystals |
| Author: |
Majchrowski, A. Kityk, I. V. |
| Appeared in: |
Ferroelectrics letters section |
| Paging: | Volume 29 (2002) nr. 1-2 pages 31-36 |
| Year: |
2002 |
| Contents: |
Besides the traditional borate materials, β-BaB 2 O 4 [1] and LiB 3 O 5 (LBO) [2] such crystals as Li 2 B 4 O 7 (LTBO) [3], CsLiB 6 O 10 (CLBO) [4], YAl 3 (BO 3 ) 4 (YAB) [5], Ca 4 GdO(BO 3 ) 3 (GdCBO) [6] and Ca 4 YO(BO 3 ) 3 (YCOB) [7] are currently being intensively investigated for non-linear optical applications. These materials typically have high viscosity and very often melt non-congruently. These properties create technological problems that can be resolved by applying very precise devices for operating the growth conditions. Another important problem that appears in the borates is an existence of vacancy-induced phase transitions [8]. The occusence of phase transitions in the vacancy-induced YAB crystals is because they possess cationic subsystems formed by ions of different weights. In order to stimulate the vacancy-bearing process, we have doped the crystals with the Nd ions. The defectiveness of the crystals was determined using light scattering similarly to the method described in Ref. [9]. The dimensionless parameter D was introduced as a ratio of the integral light scattering intensity in defective crystals to the same intensity in perfect crystals. |
| Publisher: |
Taylor & Francis |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 23 of 127 found articles
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