|
| << vorige | volgende >> |
Tijdschrift beschrijving
Alle jaargangen van het bijbehorende tijdschrift
Alle afleveringen van het bijbehorende jaargang
Alle artikelen van de bijbehorende aflevering
Details van artikel 115 van 127 gevonden artikelen
| Titel: |
The preparation and properties of PZT thin film by sputering method |
| Auteur: |
Chen, Huiting Yu, Dawei Dong, Xianling Duan, Ning Wang, Yongling |
| Verschenen in: |
Ferroelectrics letters section |
| Paginering: | Jaargang 20 (1995) nr. 1-2 pagina's 35-40 |
| Jaar: |
1995-11-01 |
| Inhoud: |
The ferroelectric PZT thin films were prepared on Pt/Ti/SiO2/Si substrate by RF sputtering method followed by the rapid thermal annealing. The preparation of the Pt and Ti thin films as bottom electrode, and their influences on the PZT thin films were studied in details. The substrate temperature during sputtering was room temperature; the rapid thermal annealing temperature was 500°C-750°C and the annealing time was 30-70s. The influences of different preparation parameters on the structure and electric properties were studied with X-ray diffraction technique and RT66A Standardized Ferroelectric Test System. The electric properties of the prepared PZT thin film was: Pa=39μc/cm2, Pr = 9.3 μc/cm2, Ec=28KV/mm, ε=300, p=109ω⋅cm. |
| Uitgever: |
Taylor & Francis |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
Details van artikel 115 van 127 gevonden artikelen
| << vorige | volgende >> |