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Details van artikel 16 van 46 gevonden artikelen
| Titel: |
Evaluation of FerroelectricSilicon Interface State Density in Ferroelectric-Gate Transistors Using a Charge Pumping Method |
| Auteur: |
Aizawa, Koji Ishiwara, Hiroshi |
| Verschenen in: |
Ferroelectrics |
| Paginering: | Jaargang 293 (2003) nr. 1 pagina's 119-126 |
| Jaar: |
2003 |
| Inhoud: |
Interface state density between a ferroelectric SrBi2Ta2O9 (SBT) and a silicon substrate was investigated by applying the charge pumping method to the n-channel metal-ferroelectric-silicon field effect transistors (MFS FETs). It was found from the frequency dependence of the surface recombination charge that the mean interface state density of the SBTSi structure annealed at 675C was about 4.3 1011 cm2 eV1, while that the density was higher than 3 1012 cm2 eV1, when the SBT films were annealed at 700C and higher. It was also found from the drain current vs. gate voltage characteristics of the MFS FETs that the maximum value of the effective channel mobility was about 180 cm2Vs when the SBT film was annealed at 675C. |
| Uitgever: |
Taylor & Francis |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
Details van artikel 16 van 46 gevonden artikelen
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