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Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties |
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Titel: |
Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties |
Auteur: |
Roder, Melissa Steiner, Johannes Wellmann, Peter Kabukcuoglu, Merve Hamann, Elias Haaga, Simon Hänschke, Daniel Danilewsky, Andreas |
Verschenen in: |
Journal of applied crystallography |
Paginering: |
Jaargang 56 () nr. 3 pagina's 776-786 |
Jaar: |
2023-06-01 |
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Uitgever: |
International Union of Crystallography, 5 Abbey Square, Chester, Cheshire CH1 2HU, England |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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