High diffraction efficiency at hard X-ray energy in a silicon crystal bent by indentation
Titel:
High diffraction efficiency at hard X-ray energy in a silicon crystal bent by indentation
Auteur:
Barrière, Nicolas Guidi, Vincenzo Bellucci, Valerio Camattari, Riccardo Buslaps, Thomas Rousselle, Julien Roudil, Gilles Arnaud, Franois-Xavier Bastie, Pierre Natalucci, Lorenzo
Verschenen in:
Journal of applied crystallography
Paginering:
Jaargang 43 (2010) nr. 6 pagina's 1519-1521
Jaar:
2010-02-01
Inhoud:
Uitgever:
International Union of Crystallography, 5 Abbey Square, Chester, Cheshire CH1 2HU, England