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                                       Details for article 12 of 15 found articles
 
 
  Precise relative X-ray measurement of the lattice parameter of silicon crystals with growth striations
 
 
Title: Precise relative X-ray measurement of the lattice parameter of silicon crystals with growth striations
Author: Kuběna, J.
Holý, V.
Appeared in: Journal of applied crystallography
Paging: Volume 21 (1988) nr. 3 pages 245-251
Year: 1988-06-01
Contents:
Publisher: International Union of Crystallography, 5 Abbey Square, Chester, Cheshire CH1 2HU, England
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 12 of 15 found articles
 
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