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Details for article 1 of 24 found articles
| Title: |
Accuracy in X-ray rocking-curve analysis as a necessary requirement for revealing vacancies and interstitials in regrown silicon layers amorphized by ion implantation |
| Author: |
Servidori, M. Cembali, F. |
| Appeared in: |
Journal of applied crystallography |
| Paging: | Volume 21 (1988) nr. 2 pages 176-181 |
| Year: |
1988-04-01 |
| Contents: | |
| Publisher: |
International Union of Crystallography, 5 Abbey Square, Chester, Cheshire CH1 2HU, England |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 1 of 24 found articles
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