Application of the Bridgman Method to Obtain Thermoelectric Silicon Doped with Germanium and Phosphorus
Titel:
Application of the Bridgman Method to Obtain Thermoelectric Silicon Doped with Germanium and Phosphorus
Auteur:
Dorokhin, M. V. Kuznetsov, Yu. M. Demina, P. B. Erofeeva, I. V. Zdoroveyshchev, A. V. Ved’, M. V. Zdoroveyshchev, D. A. Zavrazhnov, A. Yu. Nekrylov, I. N. Peshcherova, S. M. Presnyakov, R. V. Sakharov, N. V.