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  A comprehensive study of device variability of sub-5 nm nanosheet transistors and interplay with quantum confinement variation
 
 
Title: A comprehensive study of device variability of sub-5 nm nanosheet transistors and interplay with quantum confinement variation
Author: Luo, Haowen
Li, Ruihan
Miao, Xiangshui
Wang, Xingsheng
Appeared in: Science China information sciences
Paging: Volume 66 () nr. 2 pages xx
Year: 2022-11-04
Contents:
Publisher: Science China Press, Beijing
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2 of 30 found articles
 
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