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Journal description
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Details for article 7 of 20 found articles
| Title: |
Investigation on TG n-FinFET Parameters by Varying Channel Doping Concentration and Gate Length |
| Author: |
Boukortt, N. Hadri, B. Patanè, S. Caddemi, A. Crupi, G. |
| Appeared in: |
SILICON |
| Paging: | Volume 9 (2017) nr. 6 pages 885-893 |
| Year: |
2017 |
| Contents: | |
| Publisher: |
Springer Netherlands, Dordrecht |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 7 of 20 found articles
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