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Details for article 8 of 20 found articles
| Title: |
Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method |
| Author: |
Li, Jiacheng Lv, Xuekang Hu, Rongrong Ali, Salamat Li, Gengjin Qi, Jing He, Deyan |
| Appeared in: |
SILICON |
| Paging: | Volume 17 () nr. 1 pages 51-62 |
| Year: |
2024-10-24 |
| Contents: | |
| Publisher: |
Springer Netherlands, Dordrecht |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 8 of 20 found articles
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