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Details for article 33 of 38 found articles
| Title: |
Quantization Effect in N-Channel Inversion Mode Si, In0.53Ga0.47As and Ge Based Double Gate MOSFET Using Quasi-Static Capacitance–Voltage Characteristics for Upcoming Sub 10 nm Technology Node |
| Author: |
Sanjay, Kumar, Vibhor Vohra, Anil |
| Appeared in: |
SILICON |
| Paging: | Volume 16 () nr. 8 pages 3325-3340 |
| Year: |
2024-03-01 |
| Contents: | |
| Publisher: |
Springer Netherlands, Dordrecht |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 33 of 38 found articles
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