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Journal description
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Details for article 29 of 38 found articles
| Title: |
Recalculation of Intrinsic Carrier Concentration in Silicon at T = 300 K in Presence of Degenerate Doping |
| Author: |
Ashraf, Nabil Shovon |
| Appeared in: |
SILICON |
| Paging: | Volume 16 () nr. 1 pages 435-439 |
| Year: |
2023-09-26 |
| Contents: | |
| Publisher: |
Springer Netherlands, Dordrecht |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 29 of 38 found articles
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