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Journal description
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Details for article 5 of 36 found articles
| Title: |
Band Gap and Drain Dielectric Pocket Engineered Si0.2Ge0.8/GaAs Junctionless TFET with Dual Dielectric Gate for Ambipolar Suppression and Electrical Performance Enhancement |
| Author: |
Kumar, Kaushal Sharma, Subhash Chandra |
| Appeared in: |
SILICON |
| Paging: | Volume 15 () nr. 6 pages 2663-2677 |
| Year: |
2022-11-04 |
| Contents: | |
| Publisher: |
Springer Netherlands, Dordrecht |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 5 of 36 found articles
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