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  A Comprehensive Review on the Single Gate, Double Gate, Tri-Gate, and Heterojunction Tunnel FET for Future Generation Devices
 
 
Title: A Comprehensive Review on the Single Gate, Double Gate, Tri-Gate, and Heterojunction Tunnel FET for Future Generation Devices
Author: Hannah Blessy, P.
Shenbagavalli, A.
Arun Samuel, T. S.
Appeared in: SILICON
Paging: Volume 15 () nr. 5 pages 2385-2405
Year: 2022-10-27
Contents:
Publisher: Springer Netherlands, Dordrecht
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2 of 36 found articles
 
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