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Journal description
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Details for article 9 of 39 found articles
| Title: |
Correction to: Implementation of Band Gap and Gate Oxide Engineering to Improve the Electrical Performance of SiGe/InAs Charged Plasma-based Junctionless-TFET |
| Author: |
Kumar, Kaushal Kumar, Ajay Mishra, Varun Sharma, Subhash Chandra |
| Appeared in: |
SILICON |
| Paging: | Volume 15 () nr. 3 pages 1315 |
| Year: |
2022-09-24 |
| Contents: | |
| Publisher: |
Springer Netherlands, Dordrecht |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 9 of 39 found articles
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