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Details for article 10 of 40 found articles
| Title: |
Double Gate Double-Channel AlGaN/GaN MOS HEMT and its Applications to LNA with Sub-1 dB Noise Figure |
| Author: |
Vadizadeh, Mahdi Fallahnejad, Mohammad Shaveisi, Maryam Ejlali, Reyhaneh Bajelan, Farshad |
| Appeared in: |
SILICON |
| Paging: | Volume 15 () nr. 2 pages 1093-1103 |
| Year: |
2022-09-05 |
| Contents: | |
| Publisher: |
Springer Netherlands, Dordrecht |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 10 of 40 found articles
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