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                                       Details for article 9 of 34 found articles
 
 
  Design of Si0.5Ge0.5 Sourced Nano-cantilever Pressure Sensor Based on Charge Plasma and Gate Stacked Nanowire Tunnel Field Effect Transistor
 
 
Title: Design of Si0.5Ge0.5 Sourced Nano-cantilever Pressure Sensor Based on Charge Plasma and Gate Stacked Nanowire Tunnel Field Effect Transistor
Author: Singh, Navaneet Kumar
Appeared in: SILICON
Paging: Volume 15 () nr. 18 pages 7943-7951
Year: 2023-08-25
Contents:
Publisher: Springer Netherlands, Dordrecht
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 9 of 34 found articles
 
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