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  Comparative Investigation of Band Gap and Gate Metal Engineered Novel Si0.2Ge0.8/GaAs Charge Plasma-Based JLTFET for Improved Electrical Performance
 
 
Title: Comparative Investigation of Band Gap and Gate Metal Engineered Novel Si0.2Ge0.8/GaAs Charge Plasma-Based JLTFET for Improved Electrical Performance
Author: Kumar, Kaushal
Kumar, Ajay
Kumar, Vinay
Sharma, Subhash Chander
Appeared in: SILICON
Paging: Volume 15 () nr. 11 pages 4689-4702
Year: 2023-03-11
Contents:
Publisher: Springer Netherlands, Dordrecht
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2 of 36 found articles
 
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