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                                       Details for article 29 of 52 found articles
 
 
  Impact of Gate Length and Doping Variation on the DC and Analog/RF Performance of sub - 3nm Stacked Si Gate-All-Around Nanosheet FET
 
 
Title: Impact of Gate Length and Doping Variation on the DC and Analog/RF Performance of sub - 3nm Stacked Si Gate-All-Around Nanosheet FET
Author: Yadav, Nisha
Jadav, Sunil
Saini, Gaurav
Appeared in: SILICON
Paging: Volume 15 () nr. 1 pages 217-228
Year: 2022-07-14
Contents:
Publisher: Springer Netherlands, Dordrecht
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 29 of 52 found articles
 
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