|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 3 of 50 found articles
| Title: |
Characterization of Commercial P-MOSFETs for Using as a Gamma-Rays Dosimeter |
| Author: |
Assaf, J. |
| Appeared in: |
SILICON |
| Paging: | Volume 14 () nr. 4 pages 1767-1774 |
| Year: |
2021-02-06 |
| Contents: | |
| Publisher: |
Springer Netherlands, Dordrecht |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 50 found articles
| << previous | next >> |