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Details for article 4 of 40 found articles
| Title: |
A Novel Deep Gate LDMOS Structure Using Double P-Trench to Improve the Breakdown Voltage and the On-State Resistance |
| Author: |
Gavoshani, Amir Orouji, Ali A. Abbasi, Abdollah |
| Appeared in: |
SILICON |
| Paging: | Volume 14 () nr. 2 pages 597-602 |
| Year: |
2021-01-02 |
| Contents: | |
| Publisher: |
Springer Netherlands, Dordrecht |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 4 of 40 found articles
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